Ordering number:ENN2798A
PNP Epitaxial Planar Silicon Transistors
2SA1688
High-Frequency General-Purpose Amplifier Appl...
Ordering number:ENN2798A
PNP Epitaxial Planar Silicon
Transistors
2SA1688
High-Frequency General-Purpose Amplifier Applications
Applications
· Ideally suited for use in FM RF amplifiers, mixers, oscillators. converters, and IF amplifiers.
Features
· High power gain : PG=22dB typ (f=100MHz). · Ultrasmall-sized package permitting 2SA1688-
applied sets to be made small and slim.
0.425
Package Dimensions
unit:mm 2059B
[2SA1688]
0.3
3
0.15
0.2
0 to 0.1
2.1 1.250
0.425
12 0.65 0.65
2.0
0.3 0.6 0.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
1 : Base 2 : Emitter 3 : Collector SANYO : MCP
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Conditions
Ratings –30 –20 –5 –30 150 150
–55 to +150
Unit V V V mA W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Base-to-Collector Time Constant Voltage Gain Noise Figure
ICBO IEBO hFE
fT Cre rbb’ Cc PG
NF
VCB=–10V, IE=0 VEB=–4V, IC=0 VCE=–6V, IC=–1mA VCE=–6V, IC=–1mA VCB=–6V, f=1MHz VCE=–6V, IC=–1mA, f=31.9MHz
See specified Test Circuit, VCE=–6V, IC=–1mA, f=100MHz
60* 150 230
1.1 11 22 2.5
* : The 2SA1688 is classified by 1mA hFE as follows :
Rank
3
4
5
hFE 60 to 120 90 to 180 135 to 270
Markin...