2SA1688

Ordering number:ENN2798A PNP Epitaxial Planar Silicon Transistors 2SA1688 High-Frequency General-Purpose Amplifier Applications Applications · Ideally suited for use in FM RF amplifiers, mixers, oscillators. converters, and IF amplifiers. Features · High power gain : PG=22dB typ (f=100MHz). · Ultrasmall-sized package permitting 2SA1688- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SA1688] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 Specifications Absolute Maximum Ratings at Ta = 25˚C 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings –30 –20 –5 –30 150 150 –55 to +150 Unit V V V mA W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Base-to-Collector Time Constant Voltage Gain Noise Figure ICBO IEBO hFE fT Cre rbb’ Cc PG NF VCB=–10V, IE=0 VEB=–4V, IC=0 VCE=–6V, IC=–1mA VCE=–6V, IC=–1mA VCB=–6V, f=1MHz VCE=–6V, IC=–1mA, f=31.9MHz See specified Test Circuit, VCE=–6V, IC=–1mA, f=100MHz 60* 150 230 1.1 11 22 2.5 * : The 2SA1688 is classified by 1mA hFE as follows : Rank 3 4 5 hFE 60 to 120 90 to 180 135 to 270 Markin...