2SA1683

Ordering number:ENN3012 PNP Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO>80V. Package Dimensions unit:mm 2033A [2SA1683/2SC4414] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1683 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C 123 1.3 1.3 0.7 0.7 Conditions 3.0 3.8 Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=(–)60V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)50mA VCE=(–)5V, IC=(–)400mA VCE=(–)10V, IC=(–)10mA * : 2SA1683/2SC4414 are classified by 50mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings (–)100 (–)80 (–)5 (–)500 (–)800 (–)100 300 150 –55 to +150 Unit V V V mA mA mA mW ˚C ˚C Ratings min typ 100* 60 120 max (–)0.1 (–)0.1 400* Unit µA µA MHz Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-...