MSD601-ST1

MSD601−RT1, MSD601−ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Collector − Base Voltage Collector − Emitter Voltage Emitter − Base Voltage Collector Current − Continuous Collector Current − Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200 Unit Vdc Vdc Vdc mAdc mAdc 3 2 BASE 1 EMITTER MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 −55 ~ +150 Unit mW °C °C 2 1 SC−59 CASE 318D Yx M G G x Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. = R for RT1 S for ST1 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 7 Publication Order Number: MSD601−RT1/D Free Datasheet http://www.datasheet4u.com/ MSD601−RT1, MSD601−ST1 ELECT...