2SA1680

2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High collector power dissipation: PC = 900 mW (Ta = 25 °C) High-speed switching: tstg = 300 ns (typ.) Complementary to 2SC4408. Absolute Maximum Ratings (Ta = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range ymbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −60 −50 −6 −2 −0.2 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC T JEITA TOSHIBA O-92MOD ― 2-5J1A Weight: 0.36 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 http://www.Datasheet4U.com 2SA1680 Electrical Characteristics (Ta = 25°C) Characteristics S Collector cut-off current Emi...