DatasheetsPDF.com

SSM3J133TU Dataheets PDF



Part Number SSM3J133TU
Manufacturers Toshiba
Logo Toshiba
Description Silicon P-Channel MOSFET
Datasheet SSM3J133TU DatasheetSSM3J133TU Datasheet (PDF)

SSM3J133TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J133TU ○ Power Management Switch Applications • 1.5V drive • Low ON-resistance: RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V) Unit: mm 2.1±0.1 1.7±0.1 1 0.3-+00..015 2.0±0.1 0.65±0.05 Absolute Maximum Ratings (Ta = 25°C) 2 3 Characteristics Symbol Rating Unit 0.166±0.05 Drain-source voltag.

  SSM3J133TU   SSM3J133TU


Document
SSM3J133TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J133TU ○ Power Management Switch Applications • 1.5V drive • Low ON-resistance: RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V) Unit: mm 2.1±0.1 1.7±0.1 1 0.3-+00..015 2.0±0.1 0.65±0.05 Absolute Maximum Ratings (Ta = 25°C) 2 3 Characteristics Symbol Rating Unit 0.166±0.05 Drain-source voltage VDSS -20 V 0.7±0.05 Gate-source voltage VGSS ±8 V Drain current DC ID (Note1) -5.5 A Pulse IDP (Note1) -11.0 power dissipation Channel temperature Storage temperature range PD (Note2) 500 mW t<1s 1000 Tch 150 °C Tstg −55 to 150 °C UFM 1: Gate 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2U1A operating temperature/current/voltage, etc.) are within the weight: 6.6 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: The channel temperature should not exceed 150°C during use. Note2: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking 3 Equivalent Circuit (Top view) 3 JJL 1 2 1 2 Start of commercial production 2011-02 1 2014-03-01 SSM3J133TU Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max Unit Drain-source breakdown voltage V (BR) DSS ID = -1 mA, VGS = 0 V V (BR) DSX ID = -1 mA, VGS = 5 V -20 ⎯ ⎯ V . (Note 4) -15 ⎯ ⎯ V Drain cut-off current IDSS VDS = -20 V, VGS = 0 V ⎯ ⎯ -1 μA Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V Forward transfer admittance ⏐Yfs⏐ VDS = -3 V, ID = -1.0 A (Note 3) 5.2 10.4 ⎯ S ID = -3.0 A, VGS = -4.5 V (Note 3) ⎯ 24.9 29.8 Drain-source ON-resistance RDS (ON) ID = -2.5 A, VGS = -2.5 V ID = -1.5 A, VGS = -1.8 V (Note 3) ⎯ (Note 3) ⎯ 31.1 39.7 mΩ 38.8 56.0 ID = -0.5 A, VGS = -1.5 V (Note 3) ⎯ 47.4 88.4 Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VDS = -10 V, VGS = 0 V f = 1 MHz ⎯ 840 ⎯ ⎯ 118 ⎯ pF ⎯ 99 ⎯ Switching time Turn-on time Turn-off time ton VDD = -10 V, ID = -2.0 A toff VGS = 0 to -2.5 V, RG = 4.7 Ω ⎯ 32 ⎯ ns ⎯ 107 ⎯ Total gate charge Gate-source charge Gate-drain charge Qg Qgs1 Qgd VDD = -10 V, ID = -4.0 A, VGS = -4.5 V ⎯ 12.8 ⎯ ⎯ 1.4 ⎯ nC ⎯ 3.0 ⎯ Drain-Source forward voltage VDSF ID = 5.5A, VGS = 0 V (Note3) ⎯ 0.83 1.2 V Note 3: Pulse test Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit 0 IN −2.5V 10 μs VDD = -10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common source Ta = 25°C RG OUT RL VDD (b) VIN 0V −2.5 V (c) VOUT VDS (ON) VDD 90% 10% 90% 10% tr tf ton toff Notice on Usage Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-1 mA for the SSM3J133TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration. 2 2014-03-01 Drain current ID (A) -10 VGS = -4.5 V -8 ID – VDS -2.5 V -1.8 V -6 -1.5 V -4 -2 Common source Ta = 25 °C Pulse test 0 0 -0.2 -0.4 -0.6 -0.8 -1 Drain-source voltage VDS (V) Drain current ID (A) SSM3J133TU -100 Common source VDS = -3 V -10 Pulse test ID – VGS -1 -0.1 Ta = 100 °C -0.01 −25 °C -0.001 25 °C -0.0001 0 -0.5 -1.0 -1.5 -2.0 Gate-source voltage VGS (V) 140 120 100 80 60 40 20 0 0 RDS (ON) – VGS ID = -0.5 A Common source Pulse test Ta = 100 °C 25 °C − 25 °C .


SSM3J130TU SSM3J133TU SSM3J134TU


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)