Document
SSM3J133TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J133TU
○ Power Management Switch Applications
• 1.5V drive • Low ON-resistance: RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V)
Unit: mm 2.1±0.1 1.7±0.1
1
0.3-+00..015
2.0±0.1 0.65±0.05
Absolute Maximum Ratings (Ta = 25°C)
2
3
Characteristics
Symbol
Rating
Unit
0.166±0.05
Drain-source voltage
VDSS
-20
V
0.7±0.05
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID (Note1)
-5.5
A
Pulse
IDP (Note1)
-11.0
power dissipation
Channel temperature Storage temperature range
PD (Note2)
500
mW
t<1s
1000
Tch
150
°C
Tstg
−55 to 150
°C
UFM
1: Gate 2: Source 3: Drain
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2U1A
operating temperature/current/voltage, etc.) are within the
weight: 6.6 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: The channel temperature should not exceed 150°C during use.
Note2: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
3
Equivalent Circuit (Top view)
3
JJL
1
2
1
2
Start of commercial production
2011-02
1
2014-03-01
SSM3J133TU
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Conditions
Min Typ. Max Unit
Drain-source breakdown voltage
V (BR) DSS ID = -1 mA, VGS = 0 V V (BR) DSX ID = -1 mA, VGS = 5 V
-20
⎯
⎯
V
. (Note 4) -15
⎯
⎯
V
Drain cut-off current
IDSS VDS = -20 V, VGS = 0 V
⎯
⎯
-1
μA
Gate leakage current
IGSS VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
Forward transfer admittance
⏐Yfs⏐ VDS = -3 V, ID = -1.0 A
(Note 3) 5.2 10.4 ⎯
S
ID = -3.0 A, VGS = -4.5 V
(Note 3) ⎯ 24.9 29.8
Drain-source ON-resistance
RDS (ON) ID = -2.5 A, VGS = -2.5 V ID = -1.5 A, VGS = -1.8 V
(Note 3) ⎯ (Note 3) ⎯
31.1 39.7 mΩ
38.8 56.0
ID = -0.5 A, VGS = -1.5 V
(Note 3) ⎯ 47.4 88.4
Input capacitance Output capacitance Reverse transfer capacitance
Ciss Coss Crss
VDS = -10 V, VGS = 0 V f = 1 MHz
⎯
840
⎯
⎯
118
⎯
pF
⎯
99
⎯
Switching time
Turn-on time Turn-off time
ton
VDD = -10 V, ID = -2.0 A
toff
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯
32
⎯
ns
⎯
107
⎯
Total gate charge Gate-source charge Gate-drain charge
Qg Qgs1 Qgd
VDD = -10 V, ID = -4.0 A, VGS = -4.5 V
⎯ 12.8 ⎯
⎯
1.4
⎯
nC
⎯
3.0
⎯
Drain-Source forward voltage
VDSF ID = 5.5A, VGS = 0 V
(Note3) ⎯ 0.83 1.2
V
Note 3: Pulse test
Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit
(a) Test Circuit
0 IN
−2.5V
10 μs
VDD = -10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common source Ta = 25°C
RG
OUT
RL VDD
(b) VIN
0V
−2.5 V
(c) VOUT VDS (ON)
VDD
90%
10%
90%
10%
tr
tf
ton
toff
Notice on Usage
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-1 mA for the SSM3J133TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration.
2
2014-03-01
Drain current ID (A)
-10 VGS = -4.5 V
-8
ID – VDS
-2.5 V
-1.8 V
-6
-1.5 V
-4
-2
Common source
Ta = 25 °C
Pulse test
0
0
-0.2
-0.4
-0.6
-0.8
-1
Drain-source voltage VDS (V)
Drain current ID (A)
SSM3J133TU
-100 Common source VDS = -3 V
-10 Pulse test
ID – VGS
-1
-0.1 Ta = 100 °C
-0.01
−25 °C
-0.001
25 °C
-0.0001 0
-0.5
-1.0
-1.5
-2.0
Gate-source voltage VGS (V)
140 120
100 80 60 40
20 0 0
RDS (ON) – VGS
ID = -0.5 A Common source Pulse test
Ta = 100 °C
25 °C
− 25 °C
.