SSM3J130TU

SSM3J130TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J130TU ○ Power Management Switch Applications 1.5 V drive Low ON-resistance:RDS(ON) = 63.2 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 41.1 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 31.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 25.8 mΩ (max) (@VGS = -4.5 V) Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -20 V Gate-Source voltage VGSS ±8 V Drain current DC ID Pulse IDP -4.4 A -8.8 Power dissipation PD (Note 1) 800 mW PD (Note 2) 500 Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2) Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645...