MBR540
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C D ...
MBR540
Wide Temperature Range and High Tjm
Schottky Barrier Rectifiers
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C D E F G H J K L M N Q
A=Anode, C=Cathode, TAB=Cathode VRRM V 40 VRMS V 28 VDC V 40
MBR540
Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055
Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
Symbol I(AV) IFSM VF IR CJ ROJC TJ TSTG
Characteristics Maximum Average Forward Rectified Current @TC=95oC
Maximum Ratings 5 175 0.55 @TJ=25 C @TJ=100oC
o
Unit A A V mA pF
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 5.0A DC (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range
0.5 33 350 3.5 -55 to +125 -55 to +150
C/W
o o
C C
NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case.
FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverter...