High Voltage IGBT
High Voltage IGBT
For Capacitor Discharge Applications
( Electrically Isolated Tab)
IXGF36N300
VCES = 3000V = 36A IC25...
Description
High Voltage IGBT
For Capacitor Discharge Applications
( Electrically Isolated Tab)
IXGF36N300
VCES = 3000V = 36A IC25 VCE(sat) ≤ 2.7V
ISOPLUS i4-PakTM
Symbol VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight
Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20V, 1ms VGE = 20V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 3000 ± 20 ± 30 36 18 400 ICM = 300 VCE ≤ 0.8 VCES 160 -55 ... +150 150 -55 ... +150 W °C °C °C °C °C Nm/lb-in. V~ g Applications Capacitor Discharge Pulser Circuits Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification V V V A A A A Features
1 = Gate 2 = Emitter 5 = Collector 1 2 5
Isolated Tab
1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 minute
300 260 20..120/4.5..27 4000 5
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE
Characteristic Values Min. Typ. Max. 3000 3.0 5.0 V V
Advantages High Power Density Easy to Mount
VCE = 0.8 VCES, VGE = 0V Note 2 ,TJ = 125°C VCE = 0V, VGE = ±20V IC IC = 36A, VGE = 15V, Note 1 = 100A
50 μA 2 mA ±200 2.7 5.2 nA V V
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DS99979C(11/09)
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