2SA1618

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1618 Audio Frequency General Purpose Amplifier Applications 2SA1618 Unit: mm  Small package (dual type)  High voltage and high current: VCEO = −50 V, IC = −150 mA (max)  High hFE: hFE = 120 to 400  Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.)  Complementary to 2SC4207 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO 50 V VCEO 50 V VEBO 5 V IC 150 mA IB 30 mA PC 300 mW (Note 3) Tj (Note 1) 150 °C Tj (Note 2) 125 Tstg (Note 1) 55 to 150 °C Tstg (Note 2) 55 to 125 JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 0.014 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: ...