2SA1606

Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications · High-voltage switching, AF power amplifier, 100W output predrivers. Package Dimensions unit:mm 2041 [2SA1606/2SC4159] Features · Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)180 (–)160 (–)6 (–)1.5 (–)3 Unit V V V A A W Tc=25˚C 15 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Symbol ICBO IEBO hFE fT Cob VBE VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)300mA VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz VCE=(–)5V, IC=(–)10mA 60* 100 (30)23 (–)1.5 Conditions Ratings min typ max (–)10 (–)10 200* MHz pF V Unit µA µA * : The 2SA1606/2SC4159 are classified by 300mA hFE as follows : 60 D 120 100 E 200 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-s...