2SA1587

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications 2SA1587 Unit: mm  AEC-Q101 Qualified (Note1)  High voltage: VCEO = −120 V  Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)  High hFE: hFE = 200 to 700  Low noise: NF = 1dB (typ.), 10dB (max)  Complementary to 2SC4117  Small package Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit VCBO 120 V VCEO 120 V VEBO 5 V IC 100 mA IB 20 mA PC (Note 2, 4) 200 mW PC (Note 3) 100 Tj (Note 2) 150 °C Tj (Note 3) 125 Tstg (Note 2) 55 to 150 °C Tstg (Note 3) 55 to 125 JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliabi...