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2SA1566 Dataheets PDF



Part Number 2SA1566
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Transistor
Datasheet 2SA1566 Datasheet2SA1566 Datasheet (PDF)

2SA1566 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1566 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –120 –120 –5 –100 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to.

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2SA1566 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1566 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –120 –120 –5 –100 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –120 –120 –5 — — 1 Typ — — — — — — — — Max — — — –0.1 –0.1 800 –0.15 –1.0 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA*2 I C = –10 mA, IB = –1 mA*2 I C = –10 mA, IB = –1 mA*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage V(BR)EBO I CBO I EBO hFE* 250 — — VCE(sat) VBE(sat) V V Notes: 1. The 2SA1566 is grouped by h FE as follows. 2. Pulse test Grade Mark hFE D JID 250 to 500 E JIE 400 to 800 2 2SA1566 Typical Output Characteristics Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 150 Collector Current IC (mA) –8 –10 Pulse –20 –18 –16 –14 –12 –10 100 –6 –4 –8 –6 50 –2 –4 –2 µA IB = 0 –4 –8 –12 –16 –20 Collector to Emitter Voltage VCE (V) 0 50 100 150 Ambient Temperature Ta (°C) 0 Typical Transfer Characteristics –100 DC current transfer ratio hFE VCE = –6 V Pulse Collector Current IC (mA) Ta = 75°C –10 1,000 DC Current Transfer Ratio vs. Collector Current Ta = 75°C 300 –25 25 100 25 –1.0 –25 30 VCE = –12 V Pulse 10 –1 –3 –10 –30 Collector Current IC (mA) –100 –0.1 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) 3 2SA1566 Collector to Emitter Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) –1.0 Gain bandwidth product fT (MHz) IC = 10 IB Pulse 1,000 500 Gain Bandwidth Product vs. Collector Current VCE = –6 V Pulse –0.3 200 100 50 –0.1 Ta = 75°C –0.03 25 –25 20 10 –0.5 –1.0 –2 –5 –10 –20 Collector Current IC (mA) –0.01 –1 –3 –10 –30 Collector Current IC (mA) –100 –50 Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) 100 f = 1 MHz IE = 0 30 10 3 1 –1 –3 –10 –30 –100 Collector to Base Voltage VCB (V) 4 Unit: mm 0.65 0.10 3 – 0.4 + – 0.05 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.95 1.9 ± 0.2 2.95 ± 0.2 0.3 + 0.2 1.1 – 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL Nor.


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