2SA1531A

Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 s Features q q q Low noise voltage NV. High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings –35 –55 –35 –55 –5 –100 –50 150 150 –55 ~ +150 Unit 0.65 1 2.0±0.2 1.3±0.1 0.65 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA1531 2SA1531A 2SA1531 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 2 0.9±0.1 0 to 0.1 emitter voltage 2SA1531A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector 0.7±0.1 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : F(2SA1531) H(2SA1531A) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SA1531 2SA1531A 2SA1531 2SA1531A (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE*1 VCE(sat) VBE fT NV Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –2mA IC = –100mA, IB = –10mA*2 VCE = –1V, IC = –100mA*2 VCB = –10V, IE = 2mA, f = 200MHz VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT *2 min typ max –100 –1 0.15–0.05...