2SD880

2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 BASE 1 1 2 FEATURES: * Low frequency power amplifier * Complement to 2SB834 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 60 7 3 1.5 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition Frequency Collector output capacitance Turn on time Storage time Fall time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE (sat) VBE fT Cob ton ts tf IB1=-IB2=0.2A, IC=2A VCC=30V, PW=20µs Test conditions MIN 60 60 7 100 100 60 300 1 1 3 70 0.8 1.5 0.8 V V MHz pF µs µs µs TYP MAX UNIT V V V µA µA IC=100µA, IE=0 IC=50mA, IB=0 IE= 100µA, IC=0 VCB=60V, IE=0 VEB=7V, IC=0 VCE=5V, IC=500mA IC=3A, IB=300mA IC=0.5A, VCE= 5V VCE=5 V, IC=500mA VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE Rank Range O 60-120 Y 100-200 GR 150-300 WEITRON http://www.weitron.com.tw 1/3 02-Feb-07 Free Datasheet http://www.datasheet4u.com/ 2SD880 WEITRON http://www.weitron.com.tw ...