2SD569

isc Silicon NPN Power Transistor 2SD569 DESCRIPTION ·High Collector Current: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A ·Complement to Type 2SB708 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.5 A 40 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 3A; VCE= 1V hFE-2 DC Current Gain IC= 5A; VCE= 1V  hFE-1 Classifications M L K 40-80 60-120 100-200 2SD569 MIN TYP. MAX UNIT 80 V 0.5 V 1.5 V 10 μA 10 μA 40 200 20 NO...