AP09N20BGS-HF

AP09N20BGS-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 460mΩ 7.8A S Description AP09N20B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 200 +20 7.8 5 20 69 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.8 40 Unit ℃/W ℃/W 1 201308131 Data & specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP09N20BGS-HF Electrical Characteristics@Tj=25oC(un...