AP09T10GK-HF

AP09T10GK-HF Preliminary Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Chage ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID D 100V 300mΩ 2.4A Description Advanced Power MOSFETs from APEC provide the designer with the The Advanced Power MOSFETs from APEC provide the best combination of fast switching, ruggedized device design, low ondesigner with the best combination of fast switching, resistance and cost-effectiveness. ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. S D SOT-223 G Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 Rating 100 +20 2.4 1.9 10 2.78 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 45 Units ℃/W 1 20110824pre Data and specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP09T10GK-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Sour...