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AP09N90W

Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP09N90W Advanced Power Electronics Corp. ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement N-C...


Advanced Power Electronics

AP09N90W

File Download Download AP09N90W Datasheet


Description
AP09N90W Advanced Power Electronics Corp. ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 900V 1.2Ω 8.6A G S Description AP09N90 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO- 3P type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. G D TO-3P S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 900 ± 30 8.6 5 30 240 1.92 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 92 5.2 8.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.52 40 Unit ℃/W ℃/W Data & specifications subject to change without notice 200714032 Free Datasheet http://www.datasheet4u.com/ AP09N90W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions ...




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