N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP09N90W
Advanced Power Electronics Corp.
▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement
N-C...
Description
AP09N90W
Advanced Power Electronics Corp.
▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
900V 1.2Ω 8.6A
G S
Description
AP09N90 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO- 3P type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.
G
D
TO-3P S
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 900 ± 30 8.6 5 30 240 1.92
2
Units V V A A A W W/ ℃ mJ A mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
92 5.2 8.6 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.52 40 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200714032
Free Datasheet http://www.datasheet4u.com/
AP09N90W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions ...
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