N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP09N70R-A
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated...
Description
AP09N70R-A
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant
G DD
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
650V 0.75Ω 9A
G
SS
Description
AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
G D S
TO-262(R)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 650 ±30 9 5 40 156 1.25
2
Units V V A A A W W/ ℃ mJ A mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
305 9 9 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.8 62 Unit ℃/W ℃/W
200705053-1/6
Data & specifications subject to change without notice
Free Datasheet http://www.datasheet4u.com/
AP09N70R-A
Electrical Characteristics@Tj=25 C(unless otherwise specified...
Similar Datasheet