N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP09N70P/R
Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simp...
Description
AP09N70P/R
Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement GG S
S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
D
BVDSS RDS(ON) ID
600/675V
0.75Ω 9A
Description
AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 G type provide high blocking voltage to overcome voltage surge and sag in the D S toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
TO-220(P)
The TO-220 and TO-262 package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.
G D S
TO-262(R)
Units V V A A A W W/ ℃ mJ A mJ ℃ ℃
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating - /A 600/675 ± 30 9 5 40 156 1.25
2
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
305 9 9 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0...
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