AP09N20J-HF

AP09N20H/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics ▼ RoHS Compliant G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 380mΩ 8.6A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP09N20J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 200 +30 8.6 5.5 36 69 0.55 2 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 40 8.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.8 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 200809112 Free Datasheet http://www.datasheet4u.com/ AP09N20H/J-HF Electrical Characteristics@Tj=2...