AP0903GYT-HF

AP0903GYT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Good Thermal Dissipation ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 9mΩ 16A D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness. S The PMPAK 3x3 package is special for DC-DC converters application and low 1.0mm profile with backside heat sink. ® D D D S S G PMPAK® 3x3 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20 16 13 40 3.5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 35 Units ℃/W 1 201009214 Data & specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP0903GYT-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=10A VGS=4.5V, ID=8A Min. 30 1 - Typ. 24 8.7 1.7 5 10 7 24 8 635 215 125 1.8 Max. Units 9 16 3 10 250 ...