MC4800

Freescale Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology AO48 00/ MC48 00 PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 58 @ VGS = 4.5V 30 82 @ VGS = 2.5V 1 2 3 4 ID (A) 5.0 4.2 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage 30 VDS V Gate-Source Voltage VGS ± 12 Continuous Drain Current Pulsed Drain Current b a a o TA=25 C TA=70 C o o ID IDM IS 5.0 4.1 ± 30 1.7 2.1 1.3 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RθJA Maximum 62.5 80 Units o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature www.freescale.net.cn 1 Free Datasheet http://www.datasheet4u.com/ Freescale AO48 00/ MC48 00 SPECIFICATIONS (T A =...