SW8N60

SAMWIN SW8N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.3 Ω)@VGS=10V ■ Gate Charge (Typ 38nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID : 7.5A RDS(ON) : 1.3ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. 1 3 Order Codes Item 1 2 Sales Type SW P 8N60 SW F 8N60 Marking SW8N60 SW8N60 Package TO-220 TO-220F Packaging TUBE TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (note 2) (note 1) (note 3) 147 1.18 -55 ~ + 150 300 (@TC=25oC) (note 1) 7.5 30 ± 30 230 14.7 4.5 53* 0.43 Parameter Value TO-220 600 7.5* TO-220F Unit V A A V mJ mJ V/ns W W/oC oC oC *. Drain current is limited by junction temperature. Thermal characteristics Symbol Rth...