2SA1493
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) sAbsolute maximum ratings (Ta=25°C)
Symbol ...
2SA1493
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SC3857) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1493 –200 –200 –6 –15 –5 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SA1493 –100max –100max –200min 50min∗ – 3.0max 20typ 400typ V MHz pF
20.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–200V VEB=–6V IC=–50mA VCE=–4V, IC=–5A IC=–10A, IB=–1A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz
External Dimensions MT-200
36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2
Unit
µA µA
V
a b
2 3 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 B C E 0.65 +0.2 -0.1 3.0 +0.3 -0.1
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) –60 RL (Ω) 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (µs) 0.3typ tstg (µs) 0.9typ tf (µs) 0.2typ
Weight : Approx 18.4g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) –15
5A –1.
V CE ( sa t ) – I B Characteristics (Typical)
–3
I C – V BE Temperature Characteristics (Typical)
–15 (V C E =–4V)
–1
A
–
0 60
mA
–400 mA
Collector Current I C (A)
–200m
A
–10
–1 00 mA
Collector Current I C (A)
–2
–10
eTe mp) Temp )
I B =–5 0m A
–5
˚C (
I C =–15A –10A –5A 0 0 –1 –2 –3 –4 0 0
25˚C
0
0
–1
–2
–3
–4
–30˚C
125
(CaseT
Cas
(Case
–1
–5
–1 Base-Emit...