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2N1722

Part Number	2N1722
Manufacturer	Microsemi
Description	NPN SILICON HIGH POWER TRANSISTOR
Published	Aug 17, 2013
Detailed Description	TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level J...
Datasheet	2N1722 PDF File

Overview

TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Value 80 175 10 5.
0 3.
0 50 175 -65 to +200 Units Vdc Vdc Vdc Adc W W 0 @ TA = +250C(1) @ TC = +1000C (2) TOP, Temperature Range: Operating Storage Junction Tstg 1) Derate linearly 20 mW/0C for TA between +250C and +1750C 2) Derate linearly 666 mW/0C for TC between +1000C and +1750C TO-61* 2N1724 C TO-53* 2N1722 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol...

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