2SC3112
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112
For Audio Amplifier and Switching Applications
High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emi...
