TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1432
High Voltage Control Applications Plasma Display, Ni...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1432
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
2SA1432
Unit: mm
High voltage: VCBO = −300 V, VCEO = −300 V Low saturation voltage: VCE (sat) = −0.5 V (max) Small collector output capacitance: Cob = 6 pF (typ.) Complementary to 2SC3672
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−300 −300
−8 −100 −20 1000 150 −55 to 150
V V V mA mA mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
http://store.iiic.cc/
2009-12-21
Electrical Characteristics (Ta = 25°C)
Characteristic...