Ordering number:EN1334C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1319/2SC3332
High-Voltage Switching Application...
Ordering number:EN1334C
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1319/2SC3332
High-Voltage Switching Applications
Features
· Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process.
Switching Test Circuit
Package Dimensions
unit:mm 2003A
[2SA1319/2SC3332]
( ) : 2SA1319
(For
PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F)
Specifications
JEDEC : TO-92 EIAJ : SC-43 SANYO : NP
B : Base C : Collector E : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions
Ratings (–)180 (–)160 (–)6 (–)0.7 (–)1.5 700 150
–55 to +150
Unit V V V A A
mW ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain Bandwidth Product Common Base Output Capacitance Collector-to-Emitter Saturation Voltage
ICBO IEBO hFE1 hFE2
fT Cob VCE(sat)
VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA VCB=(–)10V IC=(–)250mA, IB=(–)25mA
Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time
VBE(sat) V(BR)CBO V(BR)CEO V(B...