2SA1376

DATA SHEET SILICON TRANSISTORS 2SA1376, 1376A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH VOLTAGE AMPLIFIERS FEATURES High voltage VCEO: −180 V / −200 V (2SA1376/2SA1376A) Excellent hFE linearity High total power dissipation in small dimension: PT: 0.75 W Complementary transistor with 2SC3478 and 2SC3478A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) 2SA1376/2SA1376A Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg −200 −180/−200 −5 −100 −200 0.75 150 −55 to +150 * PW ≤ 10 ms, duty cycle ≤ 50% Unit V V V mA mA W °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation voltage ...