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2SA1371 Dataheets PDF



Part Number 2SA1371
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SA1371 Datasheet2SA1371 Datasheet (PDF)

Ordering number:ENN1413D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use · Color TV chroma output and high breakdown voltage driver. Package Dimensions unit:mm 2006B [2SA1371/2SC3468] 6.0 5.0 Features · High breakdown votage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 .

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Ordering number:ENN1413D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use · Color TV chroma output and high breakdown voltage driver. Package Dimensions unit:mm 2006B [2SA1371/2SC3468] 6.0 5.0 Features · High breakdown votage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SA1371 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.45 1.45 1 : Emitter 2 : Collector 3 : Base SANYO :MP Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.0 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) VCB=(–)200V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)30V, IC=(–)10mA IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA 40* 150 (–)0.6 (–)1.0 Conditions Ratings min typ max (–)0.1 (–)0.1 320* MHz V V Unit µA µA * : The 2SA1371/2SC3468 are classified by 10mA hFE as follows : Rank hFE C 40 to 80 D 60 to 120 E 100 to 200 F 160 to 320 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92502AS (KT)/71598HA (KT)/3237KI/3135KI/1114KI, MT No.1413-1/5 Free Datasheet http://www.Datasheet4U.com 2SA1371/2SC3468 Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Output Capacitance Reverse Transfer Capacitance Symbol V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO Cob Cre IE=(–)10µA, IC=0 VCB=(–)30V, f=1MHz VCB=(–)30V, f=1MHz Conditions Ratings min (–)300 (–)300 (–)5 2.6 (3.1) 1.8 (2.3) typ max Unit V V V pF pF pF pF --20 --18 IC -- VCE 2SA1371 20 18 IC -- VCE 2SC3468 120µA --140µA --120µA --100µA Collector Current, IC – mA --14 --12 --10 --8 --6 --4 --2 0 0 Collector Current, IC – mA --16 16 14 12 10 8 6 4 2 100µA --80µA --60µA 80µA 60µA --40µA --20µA 40µA 20µA --1 IB=0 --2 --3 --4 --5 --6 --7 --8 --9 --10 Collector-to-Emitter Voltage, VCE – V ITR03305 0 IB=0 0 1 2 3 4 5 6 7 8 9 10 Collector-to-Emitter Voltage, VCE – V 10 9 ITR03306 --10 --9 IC -- VCE 2SA1371 --60µA --50µA IC -- VCE 2SC3468 60µA 50µA Collector Current, IC – mA --7 --6 --5 --4 --3 --2 --1 0 0 Collector Current, IC – mA --8 8 7 6 5 4 3 2 1 --40µA 40µA 30µA --30µA --20µA 20µA --10µA 10µA IB=0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 Collector-to-Emitter Voltage, VCE – V ITR03307 0 IB=0 0 10 20 30 40 50 60 70 80 90 100 Collector-to-Emitter Voltage, VCE – V 1000 ITR03308 1000 7 5 hFE -- IC 2SA1371 VCE=--10V hFE -- IC 2SC3468 VCE=10V Ta=75°C 7 5 3 2 DC Current Gain, hFE 2 25°C DC Current Gain, hFE 3 Ta=75°C 25°C --25°C 100 7 5 3 2 --25°C 100 7 5 3 2 10 5 7 --1.0 2 5 7 --10 2 5 3 3 Collector Current, IC – mA 7 --100 2 10 5 7 1.0 2 3 5 7 10 2 3 5 7 ITR03309 Collector Current, IC – mA 2 100 ITR03310 No.1413-2/5 Free Datasheet http://www.Datas 2SA1371/2SC3468 1000 fT -- IC 2SA1371 VCE=--30V 1000 fT -- IC 2SC3468 VCE=30V Gain-Bandwidth Product, fT – MHz 5 3 2 Gain-Bandwidth Product, fT – MHz 7 7 5 3 2 100 7 5 3 2 100 7 5 3 2 10 5 7 --1.0 2 2 3 5 --10 Collector Current, IC – mA 3 5 7 7 --100 2 10 5 7 1.0 2 3 5 7 10 2 3 5 ITR03311 3 2 3 2 Cob -- VCB Collector Current, IC – mA 7 100 2 ITR03312 Cob -- VCB 2SA1371 f=1MHz 2SC3468 f=1MHz Output Capacitance, Cob – pF Output Capacitance, Cob – pF 10 7 5 3 2 10 7 5 3 2 1.0 7 5 5 7 1.0 7 --1.0 2 3 5 7 --100 2 --10 Collector-to-Base Voltage, VCB -- V ITR03313 7 2 3 5 5 5 7 1.0 2 3 5 7 10 2 .


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