2SA1331

Ordering number:EN3217 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications Features · Fast switching speed. · High breakdown voltage. · Small-sized package permitting the 2SA1331/ 2SC3361-applied sets to be made small and slim. Switching Time Test Circuit Package Dimensions unit:mm 2018A [2SA1331/2SC3361] ( ) : 2SA1331 (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) Specifications C : Collector B : Base E : Emitter SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP IB PC Tj Tstg (–)60 (–)50 (–)5 (–)150 (–)400 (–)40 150 125 –55 to +125 V V V mA mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance ICBO IEBO hFE fT Cob VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA VCB=(–)6V, f=1MHz Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Delay Time Rise Time VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO td tr IC=(–)10mA, IB=(–)1mA ...