2SA1323

Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –20 –5 –60 –30 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitanse (Ta=25˚C) Symbol ICBO ICEO IEBO hFE * Conditions VCB = –10V, IE = 0 VCE = –20V, IB = 0 VEB = –5V, IC = 0 VCE = –10V, IC = –1mA IC = –10mA, IB = –1mA VCE = –10V, IC = –1mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 1mA, f = 5MHz VCB = –10V, IE = 1mA, f = 2MHz VCE = –10V, IC = –1mA, f = 10.7MHz min typ max – 0.1 –100 –10 2.0±0.2 marking +0.2 0.45–0.1 s Absolute Maximum Ratings (Ta=25˚C) 15.6±0.5 Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting. Unit µA µA µA 70 – 0.1 – 0.7 150 300 2.8 22 1.2 220 V V MHz 4.0 50 2.0 dB Ω pF VCE(sat) VBE fT NF Zrb Cre *h FE Rank...