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2SA1315

Part Number	2SA1315
Manufacturer	Toshiba Semiconductor
Description	TRANSISTOR
Published	Mar 22, 2005
Detailed Description	2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1315 Power Amplifier Applications Power Switchin...
Datasheet	2SA1315 PDF File

Overview

2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • • • Low collector saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) High-speed switching time: tstg = 1.
0 μs (typ.
) Complementary to 2SC3328 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −80 −80 −5 −2 −1 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Note1: Using continuously u...

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