2SA1313

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SA1313 Unit: mm Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA High voltage: VCEO = −50 V (min) Complementary to 2SC3325 Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −50 −50 −5 −500 −50 200 150 −55 to 150 V V V mA mA mW °C °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliabili...