2SA1309A

Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 3.0±0.2 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –50 –7 –200 –100 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob * Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –2mA IC = –50mA, IB = –5mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max –100 –1 2.0±0.2 (Ta=25˚C) 0.7±0.1 marking +0.2 0.45–0.1 s Absolute Maximum Ratings 15.6±0.5 High foward current transfer ratio hFE. Allowing supply with the radial taping. Optimum for high-density mounting. Unit nA µA V V V –60 –50 –7 160 460 – 0.3 80 3.5 VCE(sat) V MHz pF *h FE Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 hFE Rank 1 Transistor PC — Ta 500 1...