2SA1298

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1298 Low Frequency Power Amplifier Application Power Switching Applications 2SA1298 Unit: mm ⚫ High DC current gain: hFE = 100 to 320 ⚫ Low saturation voltage: VCE (sat) = −0.4 V (max) (IC = −500 mA, IB = −20 mA) ⚫ Suitable for driver stage of small motor ⚫ Complementary to 2SC3265 ⚫ Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −30 V −25 V −5 V −800 mA −160 mA 200 mW 150 °C −55 to 150 °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking © 2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial producti...