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2SA1291

Sanyo Semicon Device

PNP/NPN Transistors

Ordering number:ENN1201D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1291/2SC3255 60V/10A High-Speed Switching Appl...


Sanyo Semicon Device

2SA1291

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Description
Ordering number:ENN1201D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1291/2SC3255 60V/10A High-Speed Switching Applications Applications · Various inductance lamp drivers for electrical equipment. · Inverters, converters (strobo, flash, fluorescent lamp lighting circuit). · Power amp (high power car stereo, motor controller). · High-speed switching (switching regulator, driver). Package Dimensions unit:mm 2010C [2SA1291/2SC3255] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 Features · Low saturation voltage. · Excellent current dependence of hFE. · Short switching time. ( ) : 2SA1291 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)40V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)2V, IC=(–)1A Gain-Bandwidth Product fT VCE=(–)5V, IC=(–)1A Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)5A, IB=(–)0.25A * : The 2SA1291/2SC3255 are classified by 1A hFE as follows : Rank Q R S hFE 70 to 140 100 to 200 140 to 280 18.0 5.6 1.2 0.8 123 2.55 2.55 2.7 14.0 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220AB Ratings (–)80 (–)60 (–)5 (–)10 (–)12 40 150 –5...




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