2SA1252

Ordering number:EN1048B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 F for AF Applications Features · High VEBO. · Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base E : Emitter ( ) : 2SA1252 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions SANYO : CP Ratings (–)60 (–)50 (–)15 (–)150 (–)300 200 125 –55 to +125 Unit V V V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCB=(–)40V, IE=0 VEB=(–)10V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA VCB=(–)6V, f=1MHz 90* 100 (3.5) 2.2 (–)0.5 (–)60 (–)50 (–)15 Conditions Ratings min typ max (–)0.1 (–)0.1 560* MHz pF V V V V Unit µA µA VCE(sat) IC=(–)50mA, IB=(–)5mA V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 * : The 2SA1252/2SC3134 are classified as follows according to hFE at 1mA : 90 4 180 135 5 270 200 6 400 300 7 600 Marking 2SA1252 : D 2SC3134 : H hFE rank...