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2SA1242

Toshiba Semiconductor
Part Number 2SA1242
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Medium Power Amplifier App...
Datasheet PDF File 2SA1242 PDF File

2SA1242
2SA1242

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications 2SA1242 Unit: mm • Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.
5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low collector saturation voltage : VCE (sat) = −1.
0 V (max) (IC = −4 A, IB = −0.
1 A) • High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.
0 W (Ta = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed (Note 1) Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperat...


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