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2SA1225

Part Number	2SA1225
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Driver Stage Amplifier ...
Datasheet	2SA1225 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1225 Unit: mm • High transition frequency: fT = 100 MHz (typ.
) • Complementary to 2SC2983 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −160 V Collector-emitter voltage VCEO −160 V Emitter-base voltage VEBO −5 V Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C IC IB PC −1.
5 −0.
3 1.
0 15 A A W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high ...

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