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2SA1188 Dataheets PDF



Part Number 2SA1188
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Datasheet 2SA1188 Datasheet2SA1188 Datasheet (PDF)

2SA1188, 2SA1189 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2853 and 2SC2854 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1188, 2SA1189 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1188 –90 –90 –5 –100 100 400 150 –.

  2SA1188   2SA1188



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2SA1188, 2SA1189 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2853 and 2SC2854 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1188, 2SA1189 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1188 –90 –90 –5 –100 100 400 150 –55 to +150 2SA1189 –120 –120 –5 –100 100 400 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SA1188 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SA1189 Max — — — –0.1 –0.1 800 Min Typ Max — — — –0.1 –0.1 800 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA*2 I C = –10 mA, I B = –1 mA*2 Min –90 –90 –5 — — 250 — — — — Typ — — — — — — –120 — –120 — –5 — — 250 — — — — VCE(sat) VBE(sat) –0.05 –0.15 — –0.7 130 3.2 –1.0 — — — — — –0.05 –0.15 V –0.7 130 3.2 –1.0 — — V MHz pF Gain bandwidth product f T Collector output capacitance Cob VCE = –6 V, I C = –10 mA VCB = –10 V, IE = 0, f = 1 MHz Notes: 1. The 2SA1188 and 2SA1189 are grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 See characteristic curves of 2SA1190 and 2SA1191. 2 2SA1188, 2SA1189 Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 600 400 200 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.5 ± 0.1 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear powe.


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