2SA1182

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SA1182 Unit: mm  AEC-Q101 Qualified (Note1).  Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA  Complementary to 2SC2859. Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit VCBO 35 V VCEO 30 V VEBO 5 V IC 500 mA IB 50 mA PC (Note 2, 4) 200 mW PC (Note 3) 150 Tj (Note 2) 150 °C Tj (Note 3) 125 Tstg (Note 2) 55 to 150 °C Tstg (Note 3) 55 to 125 JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated fail...