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2SA1160 Dataheets PDF



Part Number 2SA1160
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon PNP Epitaxial Type Transistor
Datasheet 2SA1160 Datasheet2SA1160 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage : VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitt.

  2SA1160   2SA1160


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