2SA1124

Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 5.9± 0.2 Unit: mm 4.9± 0.2 q q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –150 –150 –5 –100 –50 1 150 –55 ~ +150 Unit V V 3.2 0.45–0.1 1.27 1.27 +0.2 13.5± 0.5 Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2632, which is optimum for the pre-driver stage of a 40 to 60W output amplifier. 2.54± 0.15 0.7–0.2 +0.3 0.7± 0.1 8.6± 0.2 s Features 0.45–0.1 +0.2 V mA mA W ˚C ˚C 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob NV * Conditions VCB = –100V, IE = 0 IC = –0.1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCE = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV = 80dB ...