Transistor
2SA1123
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementa...
Transistor
2SA1123
Silicon
PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SC2631
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Features
q q q q
Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-driver stage of a 20 to 40W output amplifier. (Ta=25˚C)
Ratings –150 –150 –5 –100 –50 750 150 –55 ~ +150 Unit
13.5±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.45 –0.1 1.27
+0.2
0.45 –0.1
1.27
+0.2
V V mA mA mW ˚C ˚C
1 2 3
2.3±0.2
V
2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE fT Cob NV
*
Conditions VCB = –100V, IE = 0 IC = –0.1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FL...