Dual N-Channel MOSFET
FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET
September 2015
FDS89161
Dual N-Channel Shielded Gate PowerTr...
Description
FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET
September 2015
FDS89161
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 2.7 A, 105 mΩ
Features
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Applications
Synchronous Rectifier Primary Switch For Bridge Topology
D2 D2 D1 D1
Pin 1
G2 S2 G1 S1
SO-8
D2 5
D2 6
Q2
D1 7
Q1
D1 8
4 G2 3 S2 2 G1 1 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3) (Note1a)
Ratings 100 ±20 2.7 15 13 31 1.6
-55 to +150
Units V V A mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
40
(Note 1a)
78
°C/W
Dev...
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