2SA1121

2SA1121 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2618 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1121 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –35 –35 –4 –500 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –35 –35 –4 — — 60 10 — D SD 160 to 320 Typ — — — — –0.2 — — –0.64 Max — — — –0.5 –0.6 320 — — V Unit V V V µA V Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 I C = –150 mA, IB = –15 mA VCE = –3 V, IC = –10 mA VCE = –3 V, IC = –500 mA (Pulse test) VCE = –3 V, IC = –10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio V(BR)EBO I CBO VCE(sat) hFE*1 hFE Base to emitter voltage Note: Grade Mark hFE B SB 60 to 120 C SC 100 to 200 VBE 1. The 2SA1121 is grouped by h FE as follows. See characteristic curves of 2SA673. 2 2SA1121 Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 150 100 50 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 0.65 0.10 3 – 0.4 + – 0.05 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0...