FDMS86500L

FDMS86500L N-Channel PowerTrench® MOSFET September 2011 FDMS86500L N-Channel PowerTrench® MOSFET 60 V, 80 A, 2.5 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. „ Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.7 mΩ at VGS = 4.5 V, ID = 20 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant body diode technology, Applications „ Primary Switch in isolated DC-DC „ Synchronous Rectifier „ Load Switch Top Bottom Pin 1 S S D S G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) (Note 4) Ratings 60 ±20 80 158 25 180 240 104 2.5 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Char...