FDMS86322

FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 60 A, 7.65 mΩ October 2014 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 7.65 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 7.2 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Application „ DC-DC Conversion Top Bottom Pin 1 S S S G Power 56 D D DD S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 80 ±20 60 13 200 135 104 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 1.2 50 °C/W Device Marking FDMS86322 Device FDMS86322 Package Power ...